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RHRG7570, RHRG7580, RHRG7590, RHRG75100
Data Sheet April 1995 File Number 3923.1
75A, 700V - 1000V Hyperfast Diodes
RHRG7570, RHRG7580, RHRG7590 and RHRG75100 (TA49068) are hyperfast diodes with soft recovery characteristics (tRR < 85ns). They have half the recovery time of ultrafast diodes and are silicon nitride passivated ionimplanted epitaxial planar construction. These devices are intended for use as freewheeling/clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors.
Features
* Hyperfast with Soft Recovery . . . . . . . . . . . . . . . .<85ns * Operating Temperature . . . . . . . . . . . . . . . . . . . +175oC * Reverse Voltage Up To . . . . . . . . . . . . . . . . . . . . . .1000V * Avalanche Energy Rated * Planar Construction
Applications
* Switching Power Supplies * Power Switching Circuits * General Purpose
Ordering Information
PACKAGING AVAILABILITY PART NUMBER RHRG7570 RHRG7580 RHRG7590 RHRG75100 PACKAGE TO-247 TO-247 TO-247 TO-247 BRAND RHRG7570 RHRG7580 RHRG7590 RHRG75100
Package
JEDEC STYLE TO-247
ANODE CATHODE (BOTTOM SIDE METAL) CATHODE
NOTE: When ordering, use the entire part number.
Symbol
K
A
Absolute Maximum Ratings
TC = +25oC, Unless Otherwise Specified RHRG7570 RHRG7580 800 800 800 75 150 750 190 50 -65 to +175 RHRG7590 900 900 900 75 150 750 190 50 -65 to +175 RHRG75100 1000 1000 1000 75 150 750 190 50 -65 to +175 UNITS V V V A A A W mj
oC
Peak Repetitive Reverse Voltage. . . . . . . . . . . . . . . . . . . . . .VRRM Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . VRWM DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VR Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . IF(AV) (TC = +52oC) Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . .IFSM (Square Wave, 20kHz) Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . .IFSM (Halfwave, 1 Phase, 60Hz) Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Avalanche Energy (L = 40mH) (See Figures 10 and 11). . . . EAVL Operating and Storage Temperature . . . . . . . . . . . . . . . . TSTG, TJ
700 700 700 75 150 750 190 50 -65 to +175
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CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright (c) Intersil Corporation 1999
RHRG7570, RHRG7580, RHRG7590, RHRG75100
Electrical Specifications
SYMBOL VF IR TC = +25oC, Unless Otherwise Specified RHRG7570 TEST CONDITION IF = 75A, TC = +25oC IF = 75A, TC = +150oC VR = 700V, TC = +25oC VR = 800V, TC = +25oC VR = 900V, TC = +25oC VR = 1000V, TC = +25oC VR = 700V, TC = +150oC VR = 800V, TC = +150oC VR = 900V, TC = +150oC VR = 1000V, TC = +150oC IF = 1A, dIF/dt = 100A/s IF = 75A, dIF/dt = 100A/s tA tB QRR CJ RJC DEFINITIONS VF = Instantaneous forward voltage (pw = 300s, D = 2%). IR = Instantaneous reverse current. tRR = Reverse recovery time (Figure 2), summation of tA + tB. tA = Time to reach peak reverse current (See Figure 2). tB = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 2). QRR = Reverse recovery charge. CJ = Junction capacitance. RJC = Thermal resistance junction to case. EAVL = Controlled avalanche energy. (See Figures 10 and 11). pw = pulse width. D = duty cycle.
V1 AMPLITUDE CONTROLS IF V2 AMPLITUDE CONTROLS dIF/dt L1 = SELF INDUCTANCE OF R4 + LLOOP R1 Q1 +V1 0 t2 t1 R2 Q4 t3 C1 0 -V2 R3 Q3 -V4 VRM R4 LLOOP DUT 0.25 IRM IRM VR
RHRG7580 MIN TYP 55 40 240 220 MAX 3.0 2.5 500 2.0 85 100 0.8 MIN -
RHRG7590 TYP 55 40 240 220 MAX 3.0 2.5 500 2.0 85 100 0.8
RHRG75100 MIN TYP 55 40 240 220 MAX 3.0 2.5 500 2.0 85 100 0.8 UNITS V V A A A A mA mA mA mA ns ns ns ns nC pF
oC/W
MIN -
TYP 55 40 240 220 -
MAX 3.0 2.5 500 2.0 85 100 0.8
IR
tRR
IF = 75A, dIF/dt = 100A/s IF = 75A, dIF/dt = 100A/s IF = 75A, dIF/dt = 100A/s VR = 10V, IF = 0A
+V3 Q2 t1 5tA(MAX) t2 > tRR t3 > 0 L1 tA(MIN) R4 10 0
IF
dIF dt tA
tRR tB
FIGURE 1. tRR TEST CIRCUIT
FIGURE 2. tRR WAVEFORMS AND DEFINITIONS
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RHRG7570, RHRG7580, RHRG7590, RHRG75100 Typical Performance Curves
400 IR , REVERSE CURRENT (A) 1000 +175oC 100 +100oC IF, FORWARD CURRENT (A) 100
10
+100oC +175oC 10 +25oC
1
0.1
+25oC
1 0 1 3 2 VF, FORWARD VOLTAGE (V) 4 5
0.01
0
200
400
600
800
1000
VR , REVERSE VOLTAGE (V)
FIGURE 3. TYPICAL FORWARD CURRENT vs FORWARD VOLTAGE DROP
TC = +25oC 100
FIGURE 4. TYPICAL REVERSE CURRENT vs REVERSE VOLTAGE
300 250 t, RECOVERY TIMES (ns) TC = +100oC
t, RECOVERY TIMES (ns)
80
tRR
200 150
tRR
60 tA 40 tB
tB 100 50 0 tA
20
0 1
10 IF, FORWARD CURRENT (A)
75
1
10 IF, FORWARD CURRENT (A)
75
FIGURE 5. TYPICAL tRR, tA AND tB CURVES vs FORWARD CURRENT AT +25oC
TC = +175oC 500
FIGURE 6. TYPICAL tRR, tA AND tB CURVES vs FORWARD CURRENT AT +100oC
IF(AV), AVERAGE FORWARD CURRENT (A) 75
t, RECOVERY TIMES (ns)
400
60 DC 45 SQ. WAVE 30
300
tRR
200
tB
100
tA
15
0
0 25
1
10 IF, FORWARD CURRENT (A)
75
50
75
100
125
150
175
TC , CASE TEMPERATURE (oC)
FIGURE 7. TYPICAL tRR, tA AND tB CURVES vs FORWARD CURRENT AT +175oC
FIGURE 8. CURRENT DERATING CURVE FOR ALL TYPES
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RHRG7570, RHRG7580, RHRG7590, RHRG75100 Typical Performance Curves
800 CJ , JUNCTION CAPACITANCE (pF) 700 600 500 400 300 200 100 0 0 50 100 150 200 VR , REVERSE VOLTAGE (V)
(Continued)
FIGURE 9. TYPICAL JUNCTION CAPACITANCE vs REVERSE VOLTAGE
Test Circuit and Waveforms
IMAX = 1A L = 40mH R < 0.1 EAVL = 1/2LI2 [VAVL/(VAVL - VDD)] Q1 AND Q2 ARE 1000V MOSFETs Q1
L
R
+ VDD
130
1M DUT VAVL
12V
Q2
130
CURRENT SENSE IV VDD
IL
IL
12V t0 t1 t2 t
FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT
FIGURE 11. AVALANCHE CURRENT AND VOLTAGE WAVEFORMS
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
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NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (321) 724-7000 FAX: (321) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029
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